features low cost low leakage low forward voltage drop high current capability mechanical data case:jedec do--27,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.041 ounces,1.15 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. sf5 1 --- SF58 easily cleaned with alcohol,isopropanol and similar solvents 3. thermal resistance f rom junction to ambient. note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. s u pe r f a st r e c t i f i e r s the plastic material carries u/l recognition 94v-0 voltage range: 50 --- 600 v current: 5.0 a do - 27 maximum ratings and electrical characteristics dimensions in millimeters www.diode.kr diode semiconductor korea volts volts volts symbols units amps amps volts v rrm v rms v dc i (av) i fsm v f 5.0 150.0 1.25 operating junction and storage temperature range maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 0.375 ? (9.5mm) lead length at t a =55 c peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum instantaneous forward voltage at 5.0a maximum dc reverse current t a =25 c at rated dc blocking voltage t a =100 c i r 10.0 50.0 r q ja c j t j , t stg 30.0 100.0 -65 to +150 pf c a u typical thermal resistance (note 3) c/w typical junction capacitance (note 2) maximum reverse recovery time (note 1) t rr 35 ns 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 sf51 sf52 sf53 sf54 sf55 sf56 SF58 0.95 50.0
amperes amperes amperes fig.2 -- typical forward characteristic fig.3 -- forward derating curve z fig.4 -- typical junction capacitance fig.5 -- peak forward surge current ambient temperature, peak forward surge current n u m be r o f c y c l e s a t 6 0 h z reverse voltage,volts sf51 --- SF58 fig.1 -- test circuit diagram and reverse recovery time characteristic average forward current set time base for 10 ns/cm junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . instantaneous forward voltage, volts instantaneous forward current t rr -1.0a -0.25a 0 +0.5a 1cm 3 . 0 4 . 0 5 . 0 6 . 0 0 . 3 0 . 5 0 . 7 0 . 9 1 . 1 1 . 3 1 . 5 t j =25 pulse width=300 40 100 20 sf55 - sf56 sf51 - sf54 pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) single phase half wave 60h z resistive or inductive load 0.375"(9.5mm)lead length 4.0 1.0 0 0 25 50 2.0 3.0 5.0 6.0 100 75 125 175 150 0 50 150 11 0 100 75 5 8.3ms single half sine-wave 50 125 100 25 175 www.diode.kr diode semiconductor korea
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